BAR 66 E6327 Infineon

BAR63... Silicon PIN Diodes PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 BAR63-02.. BAR63-04 BAR63-05 BAR63-06 BAR63-03W BAR63-04W BAR63-05W BAR63-06W Type Package Configuration L (nH) Marking S BAR63-02L* TSLP-2-1 single, leadless 0.4 G BAR63-02V SC79 single 0.6 G BAR63-02W SCD80 single 0.6 GG BAR63-03W SOD323 single 1.8 white G BAR63-04 SOT23 series 1.8 G4s BAR63-04W SOT323 series 1.4 G4s BAR63-05 SOT23 common cathode 1.8 G5s BAR63-05W SOT323 common cathode 1.4 G5s BAR63-06 SOT23 common anode 1.8 G6s BAR63-06W SOT323 common anode 1.4 G6s 1 *BAR63-02L is not qualified according AEC Q101 2011-07-18 1BAR63... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 100 mA Forward current I F mW Total power dissipation P tot BAR63-02L, T 118C 250 S BAR63-02V, -02W, BAR63-03W, T 115C 250 S BAR63-04...BAR63-06, T 55C 250 S BAR63-04S, T 115C 250 S BAR63-04W...BAR63-06W, T 105C 250 S 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAR63-02L 125 BAR63-02V, BAR63-02W 140 BAR63-03W 155 BAR63-04...BAR63-06 380 BAR63-04S 180 BAR63-04W...BAR63-06W 180 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - V Breakdown voltage V (BR) I = 5 A (BR) - - 10 Reverse current I nA R V = 35 V R - 0.95 1.2 V Forward voltage V F I = 100 mA F 1 For calculation of R please refer to the Technical Information thJA 2011-07-18 2