BAR66... Silicon PIN Diode Array Surge protection device Designed for surge overvoltage clamping in antiparallel connection Pb-free (RoHS compliant) package BAR66 Type Package Configuration L (nH) Marking S BAR66 SOT23 series 1.8 PMs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 150 V Diode reverse voltage V R 200 mA Forward current I F 250 mW Total power dissipation P tot T 25 C s 1) ESD contact discharge V 25 kV ESD 2) Peak pulse current (t = 8 / 20 s) I 12 A p pp 150 C Junction temperature T j Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 3) K/W Junction - soldering point , BAR 66 R 290 thJS 1 V according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected ESD 2 I according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected pp 3 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-06-27 1BAR66... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 150 - - V Breakdown voltage V (BR) I = 5 A (BR) - - 20 Reverse current I nA R V = 100 V R - 0.95 1.2 V Forward voltage V F I = 50 mA F Clamping voltage V CL 1) V = 15 kV (contact) - tbd - ESD 2) I = 12 A, t = 8/20 s - 7 - PP p AC Characteristics pF Diode capacitance C T V = 35 V, f = 1 MHz - 0.4 0.6 R V = 0 V, f = 100 MHz - 0.35 0.9 R - 220 - Zero bias conductance g S P V = 0 V, f = 1 GHz R - 1.5 1.8 Forward resistance r f I = 5 mA, f = 100 MHz F - 0.7 - Charge carrier life time s rr I = 10 mA, I = 6 mA, measured at I = 3 mA, F R R R = 100 L 1 V according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected ESD 2 I according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected pp 2011-06-27 2