BB837E6327HTSA1 Infineon

BB837/BB857... Silicon Tuning Diode For SAT tuners High capacitance ratio Low series resistance Excellent uniformity and matching due to in-lin matching assembly procedure Pb-free (RoHS compliant) package BB837 BB857 BB857-02V Type Package Configuration Marking BB837 SOD323 single white M BB857* SCD80 single OO BB857-02V SC79 single P * Not for new design Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 30 V Diode reverse voltage V R 35 Peak reverse voltage V RM R 5k 20 mA Forward current I F C Operating temperature range T -55 ...150 op Storage temperature T -55 ...150 Stg 2014-03-31 1BB837/BB857... Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 30 V - - 10 R V = 30 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 6 6.6 7.2 R V = 25 V, f = 1 MHz 0.5 0.55 0.65 R V = 28 V, f = 1 MHz 0.45 0.52 - R 10.2 12 - Capacitance ratio C /C - T1 T25 V = 1 V, V = 25 V, f = 1 MHz R R 9.7 12.7 - Capacitance ratio C /C T1 T28 V = 1 V, V = 28 V, f = 1 MHz R R 1) - - 5 Capacitance matching C /C % T T V = 1V ... 28V, f = 1 MHz, 7 diodes sequence R Series resistance r - 1.5 - S V = 5 V, f = 470 MHz R 1 For details please refer to Application Note 047 2014-03-31 2