BCP49 NPN Silicon Darlington Transistors For general AF applications High collector current 4 3 High current gain 2 1 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 C(2,4) B(1) E(3) EHA00009 Type Marking Pin Configuration Package BCP49 BCP 49 1 = B 2 = C 3 = E 4 = C SOT223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 60 V CEO Collector-base voltage V 80 CBO Emitter-base voltage V 10 EBO 500 mA DC collector current I C Peak collector current I 800 mA CM Base current I 100 B Peak base current I 200 BM 1.5 W Total power dissipation, T = 124 C P S tot Junction temperature T 150 C j Storage temperature T -65 ... 150 stg Thermal Resistance 2) Junction - soldering point R 17 K/W thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-04-27 1BCP49 Electrical Characteristics at T = 25C, unless otherwise specified. A Parameter Symbol Values Unit min. typ. max. DC Characteristics 60 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B 80 - - Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 C E 10 - - Emitter-base breakdown voltage V (BR)EBO I = 10 A, I = 0 E C - - 100 nA Collector cutoff current I CBO V = 60 V, I = 0 CB E - - 10 A Collector cutoff current I CBO V = 60 V, I = 0 , T = 150 C CB E A - - 100 nA Emitter cutoff current I EBO V = 5 V, I = 0 EB C 2000 - - DC current gain 1) h - FE I = 100 A, V = 1 V C CE 4000 - - DC current gain 1) h FE I = 10 mA, V = 5 V C CE 10000 - - DC current gain 1) h FE I = 100 mA, V = 5 V C CE 2000 - - DC current gain 1) h FE I = 500 mA, V = 5 V C CE 1) Pulse test: t 300 s, D = 2% 2007-04-27 2