X-On Electronics has gained recognition as a prominent supplier of BCV 27 E6327 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BCV 27 E6327 Darlington Transistors are a product manufactured by Infineon. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BCV 27 E6327 Infineon

BCV 27 E6327 electronic component of Infineon
BCV 27 E6327 Infineon
BCV 27 E6327 Darlington Transistors
BCV 27 E6327  Semiconductors

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See Product Specifications
Part No. BCV 27 E6327
Manufacturer: Infineon
Category: Darlington Transistors
Description: Transistors Darlington NPN Silicn Darlingtn TRANSISTOR
Datasheet: BCV 27 E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3913 ea
Line Total: USD 0.39 
Availability - 11066
Ship by Thu. 01 May to Mon. 05 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Mon. 12 May to Thu. 15 May
MOQ : 1
Multiples : 1
1 : USD 0.4826
10 : USD 0.4732
30 : USD 0.4662
100 : USD 0.3098

11066
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 0.3913
10 : USD 0.2888
100 : USD 0.1572
500 : USD 0.0968
1000 : USD 0.0748
3000 : USD 0.066
6000 : USD 0.0594
9000 : USD 0.0539
24000 : USD 0.0484

2682
Ship by Thu. 01 May to Mon. 05 May
MOQ : 1
Multiples : 1
1 : USD 0.476
10 : USD 0.3556
100 : USD 0.2002
203 : USD 0.0924
556 : USD 0.0868

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV 27 E6327 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV 27 E6327 and other electronic components in the Darlington Transistors category and beyond.

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BCV27, BCV47 NPN Silicon Darlington Transistors For general AF applications 2 3 High collector current 1 High current gain Complementary types: BCV26, BCV46 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCV27 30 BCV47 60 Collector-base voltage V CBO BCV27 40 BCV47 80 10 Emitter-base voltage V EBO 500 mA Collector current I C 800 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-10-05 1BCV27, BCV47 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V - (BR)CEO I = 10 mA, I = 0 , BCV27 30 - - C B I = 10 mA, I = 0 , BCV47 60 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BCV27 40 - - C E I = 100 A, I = 0 , BCV47 80 - - C E Emitter-base breakdown voltage V 10 - - V (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 30 V, I = 0 , BCV27 - - 0.1 CB E V = 60 V, I = 0 , BCV47 - - 0.1 CB E V = 30 V, I = 0 , T = 150 C, BCV27 - - 10 CB E A V = 60 V, I = 0 , T = 150 C, BCV47 - - 10 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 100 A, V = 1 V, BCV27 4000 - - C CE I = 100 A, V = 1 V, BCV47 2000 - - C CE I = 10 mA, V = 5 V, BCV27 10000 - - C CE I = 10 mA, V = 5 V, BCV47 4000 - - C CE I = 100 mA, V = 5 V, BCV27 20000 - - C CE I = 100 mA, V = 5 V, BCV47 10000 - - C CE I = 0.5 A, V = 5 V, BCV27 4000 - - C CE I = 0.5 A, V = 5 V, BCV47 2000 - - C CE 1) Collector-emitter saturation voltage V - - 1 V CEsat I = 100 mA, I = 0.1 mA C B 1) Base emitter saturation voltage V - - 1.5 BEsat I = 100 mA, I = 0.1 mA C B 2011-10-05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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