BCV27, BCV47
NPN Silicon Darlington Transistors
For general AF applications
2
3
High collector current
1
High current gain
Complementary types: BCV26, BCV46 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
Type Marking Pin Configuration Package
BCV27 FFs 1=B 2=E 3=C SOT23
BCV47 FGs 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
V
Collector-emitter voltage V
CEO
BCV27 30
BCV47 60
Collector-base voltage V
CBO
BCV27 40
BCV47 80
10
Emitter-base voltage V
EBO
500 mA
Collector current I
C
800
Peak collector current, t 10 ms I
p CM
100
Base current I
B
200
Peak base current I
BM
360 mW
Total power dissipation- P
tot
T 74 C
S
150 C
Junction temperature T
j
Storage temperature T -65 ... 150
stg
2011-10-05
1BCV27, BCV47
Thermal Resistance
Parameter Symbol Value Unit
1)
K/W
Junction - soldering point R 210
thJS
1
For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
Electrical Characteristics at T = 25C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V -
(BR)CEO
I = 10 mA, I = 0 , BCV27 30 - -
C B
I = 10 mA, I = 0 , BCV47 60 - -
C B
Collector-base breakdown voltage V
(BR)CBO
I = 100 A, I = 0 , BCV27 40 - -
C E
I = 100 A, I = 0 , BCV47 80 - -
C E
Emitter-base breakdown voltage V 10 - - V
(BR)EBO
I = 10 A, I = 0
E C
Collector-base cutoff current I A
CBO
V = 30 V, I = 0 , BCV27 - - 0.1
CB E
V = 60 V, I = 0 , BCV47 - - 0.1
CB E
V = 30 V, I = 0 , T = 150 C, BCV27 - - 10
CB E A
V = 60 V, I = 0 , T = 150 C, BCV47 - - 10
CB E A
- - 100 nA
Emitter-base cutoff current I
EBO
V = 4 V, I = 0
EB C
1)
-
DC current gain h
FE
I = 100 A, V = 1 V, BCV27 4000 - -
C CE
I = 100 A, V = 1 V, BCV47 2000 - -
C CE
I = 10 mA, V = 5 V, BCV27 10000 - -
C CE
I = 10 mA, V = 5 V, BCV47 4000 - -
C CE
I = 100 mA, V = 5 V, BCV27 20000 - -
C CE
I = 100 mA, V = 5 V, BCV47 10000 - -
C CE
I = 0.5 A, V = 5 V, BCV27 4000 - -
C CE
I = 0.5 A, V = 5 V, BCV47 2000 - -
C CE
1)
Collector-emitter saturation voltage V - - 1 V
CEsat
I = 100 mA, I = 0.1 mA
C B
1)
Base emitter saturation voltage V - - 1.5
BEsat
I = 100 mA, I = 0.1 mA
C B
2011-10-05
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