X-On Electronics has gained recognition as a prominent supplier of BCV 46 E6327 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BCV 46 E6327 Darlington Transistors are a product manufactured by Infineon. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BCV 46 E6327 Infineon

BCV 46 E6327 electronic component of Infineon
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See Product Specifications
Part No.BCV 46 E6327
Manufacturer: Infineon
Category: Darlington Transistors
Description: Transistors Darlington AF Trans Darlington PNP 60V 0.5A
Datasheet: BCV 46 E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2134 ea
Line Total: USD 0.21 
Availability - 177
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
177
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2134
10 : USD 0.1496
100 : USD 0.1243
1000 : USD 0.0715
3000 : USD 0.0671
9000 : USD 0.055
24000 : USD 0.0517
45000 : USD 0.0517
99000 : USD 0.0495

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV 46 E6327 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV 46 E6327 and other electronic components in the Darlington Transistors category and beyond.

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BCV26, BCV46 PNP Silicon Darlington Transistors For general AF applications 2 3 High collector current 1 High current gain Complementary types: BCV27, BCV47 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCV26 30 BCV46 60 Collector-base voltage V CBO BCV26 40 BCV46 80 10 Emitter-base voltage V EBO 500 mA Collector current I C 800 Peak collector current, t 10 ms I p CM 100 Base current I B 200 Peak base current I BM 360 mW Total power dissipation- P tot T 74 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg 2011-10-05 1BCV26, BCV46 Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 210 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V (BR)CEO I = 10 mA, I = 0 , BCV26 30 - - C B I = 10 mA, I = 0 , BCV46 60 - - C B Collector-base breakdown voltage V (BR)CBO I = 100 A, I = 0 , BCV26 40 - - C E I = 100 A, I = 0 , BCV46 80 - - C E Emitter-base breakdown voltage V 10 - - (BR)EBO I = 10 A, I = 0 E C Collector-base cutoff current I A CBO V = 30 , I = 0 , BCV26 - - 0.1 CB E V = 60 , I = 0 , BCV46 - - 0.1 CB E V = 30 , I = 0 , T = 150 C, BCV26 - - 10 CB E A V = 60 , I = 0 , T = 150 C, BCV46 - - 10 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 4 V, I = 0 EB C 1) - DC current gain h FE I = 100 A, V = 1 V, BCV26 4000 - - C CE I = 100 A, V = 1 V, BCV46 2000 - - C CE I = 10 mA, V = 5 V, BCV26 10000 - - C CE I = 10 mA, V = 5 V, BCV46 4000 - - C CE I = 100 mA, V = 5 V, BCV26 20000 - - C CE I = 100 mA, V = 5 V, BCV46 10000 - - C CE I = 0.5 A, V = 5 V, BCV26 4000 - - C CE I = 0.5 A, V = 5 V, BCV46 2000 - - C CE 1) Collector-emitter saturation voltage V - - 1 V CEsat I = 100 mA, I = 0.1 mA C B 1) Base emitter saturation voltage V - - 1.5 BEsat I = 100 mA, I = 0.1 mA C B 2011-10-05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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