BCV62 PNP Silicon Double Transistor To be used as a current mirror 3 Good thermal coupling and V matching BE 2 4 High current gain 1 Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration Package BCV62A 3Js 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV62B 3Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV62C 3Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage V CEO (transistor T1) 30 Collector-base voltage (open emitter) V CBO (transistor T1) 6 Emitter-base voltage V EBS 100 mA DC collector current I C 200 Peak collector current I CM 200 Base peak current (transistor T1) I BM 300 mW Total power dissipation, T = 99 C P S tot 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) Junction - soldering point R 170 K/W thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-07-25 1BCV62 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 30 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 C B 30 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C - - 15 nA Collector cutoff current I CBO V = 30 V, I = 0 CB E - - 5 A Collector cutoff current I CBO V = 30 V, I = 0 , T = 150 C CB E A 100 - - DC current gain 1) h - FE I = 0.1 mA, V = 5 V C CE DC current gain 1) h FE I = 2 mA, V = 5 V 125 180 220 BCV62A C CE 220 290 475 BCV62B 420 520 800 BCV62C mV Collector-emitter saturation voltage1) V CEsat I = 10 mA, I = 0.5 mA - 75 300 C B I = 100 mA, I = 5 mA - 250 650 C B Base-emitter saturation voltage 1) V BEsat I = 10 mA, I = 0.5 mA - 700 - C B I = 100 mA, I = 5 mA - 850 - C B Base-emitter voltage 1) V BE(ON) I = 2 mA, V = 5 V 600 650 750 C CE I = 10 mA, V = 5 V - - 820 C CE 1) Pulse test: t 300s, D = 2% 2011-07-25 2