BF799W NPN Silicon RF Transistor For linear broadband amplifier application up to 500 MHz 3 2 SAW filter driver in TV tuners 1 Pb-free (RoHS compliant) package Type Marking Pin Configuration Package BF799W LKs 1 = B 2 = E 3 = C SOT323 Maximum Ratings Parameter Symbol Value Unit 20 V Collector-emitter voltage V CEO 30 Collector-emitter voltage V CES 30 Collector-base voltage V CBO 3 Emitter-base voltage V EBO 35 mA Collector current I C 10 Base current I B 280 mW Total power dissipation P tot T = 107 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) K/W Junction - soldering point R 155 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-21 1BF799W Electrical Characteristics at T = 25 C, unless otherwise specified. A Parameter Symbol Values Unit min. typ. max. DC characteristics 20 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B 30 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E 3 - - Base-emitter breakdown voltage V (BR)EBO I = 10 A, I = 0 E C - - 100 nA Collector-base cutoff current I CBO V = 20 V, I = 0 CB E DC current gain h - FE I = 5 mA, V = 10 V 35 95 - C CE I = 20 mA, V = 10 V 40 100 250 C CE - 0.1 0.3 V Collector-emitter saturation voltage V CEsat I = 20 mA, I = 2 mA C B - - 0.95 Base-emitter saturation voltage V BEsat I = 20 mA, I = 2 mA C B AC characteristics MHz Transition frequency f T I = 5 mA, V = 10 V, f = 100 MHz - 800 - C CE I = 20 mA, V = 8 V, f = 100 MHz - 1100 - C CE - 0.96 - pF Output capacitance C ob V = 10 V, I = 0 mA, f = 1 MHz CB E - 0.7 - Collector-base capacitance C cb V = 10 V, f = 1 MHz CB - 0.28 - Collector-emitter capacitance C ce V = 10 V, f = 1 MHz CE - 3 - dB Noise figure F I = 5 mA, V = 10 V, f = 100 MHz, C CE Z = 50 S Output conductance g - 60 - S 22e I = 20 mA, V = 10 V, f = 35 MHz C CE 2011-09-21 2