BF886 NPN Bipolar RF Transistor High transducer gain of typ. 24 dB 13 mA, 1.9 GHz 3 Low minimum noise figure of typ. 0.5 dB 1.9 GHz 2 4 1 Pb-free (RoHS compliant) package For a wide range of non-automotive applications - 2nd and 3rd LNA stage and mixer stage in LNB - 5.8 GHz analog/digital cordless phone ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BF886 RZs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage V CEO T = 25 C 4.0 A T = 55 C 3.5 A 13 Collector-emitter voltage V CES 13 Collector-base voltage V CBO 1.2 Emitter-base voltage V EBO 25 mA Collector current I C 2 Base current I B 1) 100 mW Total power dissipation P tot T 108 C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg 1 T is measured on the emitter lead at the soldering point to the pcb s Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 420 thJS 1 2010-08-31BF886 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4 4.7 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - 1 - nA Collector-emitter cutoff current I CES V = 2 V, V = 0 CE BE - 1 - Collector-base cutoff current I CBO V = 2 V, I = 0 CB E - 10 - Emitter-base cutoff current I EBO V = 0.5 V, I = 0 EB C - 250 - - DC current gain h FE I = 13 V, V = 3 V, pulse measured C CE 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2010-08-31