BF888 High Performance Bipolar NPN RF Transistor High transducer gain of typ. 14 dB 25 mA,6 GHz 3 Low minimum noise figure of typ. 0.85 dB 6GHz 2 4 High output compression of typ. 11 dBm 25 mA 1 Pb-free (RoHS compliant) package For a wide range of non-automotive applications - 2nd and 3rd LNA stage and mixer stage in LNB - 5.8 GHz analog/digital cordless phone - Satellite radio SDARS - WLAN, WiMAX, UWB ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BF888 RYs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit V Collector-emitter voltage V CEO T = 25 C 4.0 A T = 55 C 3.5 A 13 Collector-emitter voltage V CES 13 Collector-base voltage V CBO 1.2 Emitter-base voltage V EBO 30 mA Collector current I C 3 Base current I B 1) 160 mW Total power dissipation P tot T 89 C S 150 C Junction temperature T J Ambient temperature T -55 ... 150 A Storage temperature T -55 ... 150 Stg 1 T is measured on the emitter lead at the soldering point to the pcb s Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 380 thJS 2010-04-06 1BF888 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 4 4.7 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - 1 - nA Collector-emitter cutoff current I CES V = 5 V, V = 0 CE BE - 1 - Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - 10 - Emitter-base cutoff current I EBO V = 0.5 V, I = 0 EB C - 250 - - DC current gain h FE I = 25 V, V = 3 V, pulse measured C CE 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2010-04-06 2