X-On Electronics has gained recognition as a prominent supplier of BFP 420 H6327 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFP 420 H6327 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFP 420 H6327 Infineon

BFP 420 H6327 electronic component of Infineon
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Part No.BFP 420 H6327
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar RF BIP TRANSISTOR
Datasheet: BFP 420 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1349 ea
Line Total: USD 0.67 
Availability - 1375
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1375
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1349
50 : USD 0.1104
150 : USD 0.0983
500 : USD 0.0891
3000 : USD 0.0686
6000 : USD 0.0648

11201
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.66
10 : USD 0.5698
100 : USD 0.4257
500 : USD 0.3344
1000 : USD 0.2585
3000 : USD 0.2354
9000 : USD 0.2156

8613
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 266
Multiples : 1
266 : USD 0.3831
500 : USD 0.3692
1000 : USD 0.3572
2500 : USD 0.3467
5000 : USD 0.3374

   
Manufacturer
Product Category
Transistor Polarity
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Dc Collector Current
Dc Current Gain Hfe
Rf Transistor Case
No. Of Pins
Msl
Svhc
Associated Gain Ga
Av Current Ic
Continuous Collector Current Ic
Continuous Collector Current Ic Max
Current Ic @ Gms
Current Ic Continuous A Max
Current Ic Fc Measurement
Current Ic Hfe
Gain Bandwidth Ft Min
Gain Bandwidth Ft Typ
Gms
Hfe Min
No. Of Transistors
Noise Figure Typ
Noise Level
Operating Temperature Range
Output @ Third Order Intercept Point Ip3
Power @ 1Db Gain Compression P1db
Smd Marking
Voltage Vcbo
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFP 420 H6327 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFP 420 H6327 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFP420 Surface mount wideband silicon NPN RF bipolar transistor Product description The BFP420 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineons established fourth generation RF bipolar transistor family. Its transition frequency f of 25 GHz, high gain and low current characteristics make the device T suitable for oscillators up to 10 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1.1 dB at 1.8 GHz, 2 V, 5 mA min High gain G = 21 dB at 1.8 GHz, 2 V, 20 mA ms OIP = 22 dBm at 1.8 GHz, 2 V, 20 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Radio-frequency oscillators Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio LNAs for sub-1 GHz ISM band applications Device information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP420 / BFP420H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E AMs 3000 BFP420 / BFP420H6433XTMA1 10000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP420 Surface mount wideband silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic DC diagrams . 8 3.5 Characteristic AC diagrams 11 4 Package information SOT343 .16 Revision history . 17 Disclaimer 18 Datasheet 2 Revision 2.0 2019-01-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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