BFP 620F H7764 Infineon

BFP620F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineons established sixth generation transistor family. Its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 0.7 dB at 1.8 GHz, 1.5 V, 5 mA min High gain G = 21 dB at 1.8 GHz, 1.5 V, 50 mA ms OIP = 25 dBm at 1.8 GHz, 2 V, 50 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) in SDARS receivers LNAs for wireless communications LNAs for ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP620F / BFP620FH7764XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E R2s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFP620F Low profile high gain silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic AC diagrams . 8 4 Package information TSFP-4-1 . 13 Revision history . 14 Disclaimer 15 Datasheet 2 Revision 2.0 2019-01-25