BFP720F SiGe:C NPN RF bipolar transistor Product description The BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list High transition frequency f = 45 GHz enables low noise figure at high frequencies: T NF = 0.7 dB at 5.5 GHz, 3 V, 5 mA min High gain G = 21.5 dB at 5.5 GHz, 3 V, 13 mA ms OIP = 21 dBm at 5.5 GHz, 3 V, 13 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP720F / BFP720FH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E R9s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFP720F SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 6 3.1 DC characteristics . 6 3.2 General AC characteristics 6 3.3 Frequency dependent AC characteristics .7 3.4 Characteristic diagrams . 11 4 Package information TSFP-4-1 . 16 Revision history . 17 Disclaimer 18 Datasheet 2 v2.0 2018-09-26