BFP843F SiGe:C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies: NF = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA min High gain G = 18 dB at 5.5 GHz, 1.8 V, 15 mA ma OIP = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA 3 Suitable for low voltage applications e.g. V = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding CC collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications WLAN, WiMAX and UWB Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP843F / BFP843FH6327XTSA1 TSFP-4-1 1 = B 2 = E 3 = C 4 = E T2s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.0 www.infineon.com 2018-09-26BFP843F SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic DC diagrams 10 3.5 Characteristic AC diagrams 13 4 Package information TSFP-4-1 . 19 Revision history . 20 Disclaimer 21 Datasheet 2 v2.0 2018-09-26