BFR360FH6327XTSA1 Infineon

BFR360F Low profile silicon NPN RF bipolar transistor Product description The BFR360F is a low noise device based on Si that is part of Infineons established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use. Feature list Minimum noise figure NF = 1 dB at 1.8 GHz, 3 V, 3 mA min High gain G = 15.5 dB at 1.8 GHz, 3 V, 15 mA ma OIP = 24 dBm at 1.8 GHz, 3 V, 15 mA 3 Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Low noise amplifiers (LNAs) for FM and AM radio LNAs for sub-1 GHz ISM band applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFR360F / BFR360FH6327XTSA1 TSFP-3-1 1 = B 2 = E 3 = C FBs 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document Revision 2.0 www.infineon.com 2019-01-25BFR360F Low profile silicon NPN RF bipolar transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Thermal characteristics . 4 3 Electrical characteristics 5 3.1 DC characteristics . 5 3.2 General AC characteristics 5 3.3 Frequency dependent AC characteristics .6 3.4 Characteristic AC diagrams . 7 4 Package information TSFP-3-1 . 13 Revision history . 14 Disclaimer 15 Datasheet 2 Revision 2.0 2019-01-25