BFR 360L3 E6765 Infineon

BFR360L3 Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR360L3 FB TSLP-3-1 1 = B 2 = E 3 = C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 6 V Collector-emitter voltage V CEO 15 Collector-emitter voltage V CES 15 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 35 mA Collector current I C 4 Base current I B 1) 210 mW Total power dissipation P tot T 104C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 220 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2013-09-03 1BFR360L3 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 6 9 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 10 A Collector-emitter cutoff current I CES V = 15 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 90 120 160 - DC current gain h FE I = 15 mA, V = 3 V, pulse measured C CE 2013-09-03 2