X-On Electronics has gained recognition as a prominent supplier of BFR 360L3 E6765 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. BFR 360L3 E6765 RF Bipolar Transistors are a product manufactured by Infineon. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

BFR 360L3 E6765 Infineon

BFR 360L3 E6765 electronic component of Infineon
BFR 360L3 E6765 Infineon
BFR 360L3 E6765 RF Bipolar Transistors
BFR 360L3 E6765  Semiconductors

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See Product Specifications
Part No. BFR 360L3 E6765
Manufacturer: Infineon
Category: RF Bipolar Transistors
Description: Infineon Technologies RF Bipolar Transistors NPN Silicon RF Transistor
Datasheet: BFR 360L3 E6765 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2638 ea
Line Total: USD 0.26 
Availability - 42605
Ship by Wed. 02 Apr to Fri. 04 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
42605
Ship by Wed. 02 Apr to Fri. 04 Apr
MOQ : 1
Multiples : 1
1 : USD 0.2638
10 : USD 0.1637
100 : USD 0.1224
1000 : USD 0.1078
2500 : USD 0.1001
15000 : USD 0.0968
45000 : USD 0.0957
90000 : USD 0.0924

   
Manufacturer
Product Category
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BFR 360L3 E6765 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BFR 360L3 E6765 and other electronic components in the RF Bipolar Transistors category and beyond.

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BFR360L3 Low Noise Silicon Bipolar RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small leadless package Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFR360L3 FB TSLP-3-1 1 = B 2 = E 3 = C Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 6 V Collector-emitter voltage V CEO 15 Collector-emitter voltage V CES 15 Collector-base voltage V CBO 2 Emitter-base voltage V EBO 35 mA Collector current I C 4 Base current I B 1) 210 mW Total power dissipation P tot T 104C S 150 C Junction temperature T J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 220 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2013-09-03 1BFR360L3 Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 6 9 - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B - - 10 A Collector-emitter cutoff current I CES V = 15 V, V = 0 CE BE - - 100 nA Collector-base cutoff current I CBO V = 5 V, I = 0 CB E - - 1 A Emitter-base cutoff current I EBO V = 1 V, I = 0 EB C 90 120 160 - DC current gain h FE I = 15 mA, V = 3 V, pulse measured C CE 2013-09-03 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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