BSB012NE2LX Infineon

n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.3, 2011-09-16 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB012NE2LX 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications Features Optimized for high performance Buck converter 100% avalanche tested 1) Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Double.sided cooling Compatible with DirectFET package MX footprint and outline 100% Rg Tested Low parasitic inductance Low profile (<0.7 mm) Applications On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit Related Links V 25 V IFX OptiMOS webpage DS R 1.2 m IFX OptiMOS product brief DS(on),max I 170 A IFX OptiMOS spice models D Q 35 nC IFX Design tools OSS Q . 32 g typ Type Package Marking BSB012NE2LX MG-WDSON-2 01E2 1) J-STD20 and JESD22 Final Data Sheet 1 2.3, 2011-09-16