BSB028N06NN3 G OptiMOS3 Power-MOSFET Product Summary Features V 60 V DS Optimized technology for DC/DC converters R 2.8 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 90 A D Superior thermal resistance TM CanPAK M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (<0.7mm) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Compatible with DirectFET package MN footprint and outline Type Package Outline Marking BSB028N06NN3 G MG-WDSON-2 MN 0106 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 90 A D GS C V =10 V, T =100C 85 GS C V =10 V, T =25C, GS A 22 2) R =58K/W thJA 3) I T =25C 360 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =30A, R =25W 590 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) DirectFET is a trademark of International Rectfier Corporation BSB028N06NN3 G uses DirectFET technology licensed from International Rectifier Corporation Rev. 2.0 page 1 2014-04-17BSB028N06NN3 G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 78 W tot C T =25 C, A 2.2 2) R =58K/W thJA T , T Operating and storage temperature -40 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - 1.0 - K/W thJC top - - 1.6 2 2) R Device on PCB - - 58 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =102A Gate threshold voltage 2 3 4 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.1 10 A DSS T =25C j V =60V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =30A - 2.2 2.8 m DS(on) GS D Gate resistance R - 0.5 - G W V >2 I R , DS D DS(on)max Transconductance g 42 83 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.0 page 2 2014-04-17