X-On Electronics has gained recognition as a prominent supplier of BSB028N06NN3GXUMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSB028N06NN3GXUMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSB028N06NN3GXUMA1 Infineon

BSB028N06NN3GXUMA1 electronic component of Infineon
BSB028N06NN3GXUMA1 Infineon
BSB028N06NN3GXUMA1 MOSFETs
BSB028N06NN3GXUMA1  Semiconductors

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See Product Specifications
Part No. BSB028N06NN3GXUMA1
Manufacturer: Infineon
Category: MOSFETs
Description: 60V 2.8mO@30A,10V N Channel WDSON-3 MOSFETs ROHS
N-channel TrenchMOS logic level FET with low on-resistance.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.1637 ea
Line Total: USD 5.16 
Availability - 9
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 5.1637
10 : USD 3.4086
30 : USD 3.0583
100 : USD 2.7651

   
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We are delighted to provide the BSB028N06NN3GXUMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSB028N06NN3GXUMA1 and other electronic components in the MOSFETs category and beyond.

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BSB028N06NN3GXUMA1 is a discrete Power MOSFET transistor manufactured by Infineon Technologies. It is a type of power switch and is suitable for a variety of switching applications due to its high-performance and robust construction. The device features an advanced trench cell and low On-resistance technology which allows it to provide high efficiency switching while minimizing losses due to heat generation. The device is packaged in a SOT223 format and features a maximum drain-source voltage of 20V and a maximum drain-source current of 4A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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