BSB044N08NN3 G OptiMOS 3 Power-MOSFET Product Summary Features V 80 V DS Optimized technology for DC/DC converters R 4.4 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 90 A D Superior thermal resistance TM CanPAK M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (<0.7mm) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications 2) Compatible with DirectFET package MN footprint and outline Type Package Outline Marking BSB044N08NN3 G MG-WDSON-2 MN 0208 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 C Continuous drain current 90 A D GS C V =10 V, T =100 C 68 GS C V =10 V, T =25 C, GS A 18 2) R =58 K/W thJA 3) I T =25 C 360 Pulsed drain current D,pulse C E I =30 A, R =25 W Avalanche energy, single pulse 660 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) DirectFET is a trademark of International Rectfier Corporation BSB028N06NN3 G uses DirectFET technology licensed from International Rectifier Corporation Rev. 2.0 page 1 2011-07-18BSB044N08NN3 G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 78 W tot C T =25 C, A 2.2 2) R =58 K/W thJA Operating and storage temperature T , T -40 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - 1.0 - K/W thJC top - - 1.6 2 2) Device on PCB R - - 58 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 80 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =97 A 2 2.8 3.5 GS(th) DS GS D V =80 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 10 A DSS T =25 C j V =80 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS R V =10 V, I =30 A Drain-source on-state resistance - 3.7 4.4 DS(on) GS D R Gate resistance - 0.5 - W G V >2 I R , DS D DS(on)max g Transconductance 36 72 - S fs I =30 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.0 page 2 2011-07-18