BSB056N10NN3 G Infineon

n-Channel Power MOSFET OptiMOS BSB056N10NN3 G Data Sheet 2.5, 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. Features Optimized for high switching frequency DC/DC converter Excellent Q x R product (FOM) g DS(on) Very low on-resistance R DS(on) Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET package MN footprint and outline Low parasitic inductance Low profile (<0.7 mm) Applications Synchronous rectification Primary side switches Power management for high performance computing High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit Related Links V 100 V IFX OptiMOS webpage DS R 5.6 m IFX OptiMOS product brief DS(on),max I 83 A IFX OptiMOS spice models D Q 73 nC IFX Design tools OSS Q . 56 g typ Type Package Marking BSB056N10NN3 G MG-WDSON-2 0110 Final Data Sheet 1 2.5, 2011-05-27