X-On Electronics has gained recognition as a prominent supplier of BSC010N04LS6ATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC010N04LS6ATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC010N04LS6ATMA1 Infineon

Name: BSC010N04LS6ATMA1
Brand: Infineon
SKU: BSC010N04LS6ATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

BSC010N04LS6ATMA1 electronic component of Infineon

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See Product Specifications

Part No.	BSC010N04LS6ATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET TRENCH <= 40V
Datasheet:	BSC010N04LS6ATMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5000: USD 0.8626 ea
Line Total: USD 4313

Availability - 9700
Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ: 5000 Multiples: 5000
Pack Size: 5000

BSC010N04LS6ATMA1 More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

9450

Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ : 34
Multiples : 1

34 : USD 1.937
50 : USD 1.859
100 : USD 1.534
500 : USD 1.2038
1000 : USD 1.0125
2000 : USD 0.9887
5000 : USD 0.8663

9700

Ship by Tue. 18 Mar to Mon. 24 Mar

MOQ : 5000
Multiples : 5000

5000 : USD 0.8626

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

100 A 100 A

Vds - Drain-Source Breakdown Voltage

40 V 40 V

Rds On - Drain-Source Resistance

1 mOhms 1 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.3 V 1.3 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

150 W 150 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

TDSON - 8 TDSON - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

67 nC 67 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Forward Transconductance - Min

250 S 250 S

Fall Time

8 ns 8 ns

Product Type

Mosfet Mosfet

Rise Time

5 ns 5 ns

Factory Pack Quantity :

5000 5000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

29 ns 29 ns

Typical Turn-On Delay Time

7 ns 7 ns

Notes:- Show Stocked Products With Similar Attributes.

BSC010N04LS6ATMA1 Alternative Parts

We are delighted to provide the BSC010N04LS6ATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC010N04LS6ATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSC010N04LS6 MOSFET TM TDSON-8 FL (enlarged source interconnection) OptiMOS 6 Power-Transistor , 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance RDS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating RoHS compliant 3 Halogen-free according to IEC61249-2-21 2 1 175 C rated Product validation S1 8D Fully qualified according to JEDEC for Industrial Applications S2 7D S3 6D Table 1 Key Performance Parameters Parameter Value Unit G4 5D V DS 40 V R 1 m DS(on),max I 285 A D Q 73 nC oss Q (0V..10V) 67 nC G Q (0V..4.5V) 32 nC G Type / Ordering Code Package Marking Related Links BSC010N04LS6 TDSON-8 FL 10N04LS6 - Final Data Sheet 1 Rev. 2.2, 2020-03-16TM OptiMOS 6 Power-Transistor , 40 V BSC010N04LS6 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 12 Trademarks . 12 Disclaimer 12 Final Data Sheet 2 Rev. 2.2, 2020-03-16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
9450 Ship by Tue. 18 Mar to Mon. 24 Mar MOQ : 34 Multiples : 1	34 : USD 1.937 50 : USD 1.859 100 : USD 1.534 500 : USD 1.2038 1000 : USD 1.0125 2000 : USD 0.9887 5000 : USD 0.8663

9700 Ship by Tue. 18 Mar to Mon. 24 Mar MOQ : 5000 Multiples : 5000	5000 : USD 0.8626

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