X-On Electronics has gained recognition as a prominent supplier of BSC010NE2LS MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSC010NE2LS MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSC010NE2LS Infineon

Hot BSC010NE2LS electronic component of Infineon
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See Product Specifications
Part No.BSC010NE2LS
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Channel 25V MOSFET
Datasheet: BSC010NE2LS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1517 ea
Line Total: USD 1.15 
Availability - 4223
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 BSC010NE2LS More Buying Options & Price Grid(s)

Availability Price Quantity
178
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 129
Multiples : 1
129 : USD 0.945

4223
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1517
10 : USD 0.9774
30 : USD 0.869
100 : USD 0.7567
500 : USD 0.7062
1000 : USD 0.6843

12776
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.529
10 : USD 1.309
100 : USD 1.067
250 : USD 0.9955
500 : USD 0.9196
1000 : USD 0.8008
2500 : USD 0.7931
5000 : USD 0.7876
10000 : USD 0.7689

4801
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 59
Multiples : 1
59 : USD 1.9067
100 : USD 1.8215
250 : USD 1.7484
500 : USD 1.6852
1000 : USD 1.6303
2500 : USD 1.5821

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSC010NE2LS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSC010NE2LS and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

BSC010NE2LS MOSFET TM SuperSO8 OptiMOS Power-MOSFET, 25 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance Buck converter Very low on-resistance RDS(on) VGS =4.5 V 100% avalanche tested Superior thermal resistance 4 N-channel 1 3 1) 2 2 Qualified according to JEDEC for target applications 3 1 4 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters S1 8D Parameter Value Unit S2 7D V 25 V DS S3 6D RDS(on),max 1.0 m G4 5D I 242 A D Q 33 nC OSS Q (0V..10V) 64 nC G Type / Ordering Code Package Marking Related Links BSC010NE2LS PG-TDSON-8 010NE2LS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.4, 2020-11-12TM OptiMOS Power-MOSFET, 25 V BSC010NE2LS Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Package Outlines . 10 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.4, 2020-11-12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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INF
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Infineon / IR
INFINEON TECH ICs
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Infineon Technologies Americas Corp.
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