BSC011N03LSI TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized for high performance SMPS R 1.1 mW DS(on),max Integrated monolithic Schottky-like diode I 100 A D Very low on-resistance R V =4.5 V DS(on) GS Q 45 nC OSS 100% avalanche tested Q (0V..10V) 68 nC G Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC011N03LSI PG-TDSON-8 011N03LI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 100 A D GS C V =10 V, T =100C 100 GS C V =4.5 V, T =25C 100 GS C V =4.5 V, GS 100 T =100C C V =10 V, T =25C, GS A 37 2) R =50K/W thJA 3) I T =25C 400 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =50A, R =25W 100 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2013-05-14 BSC011N03LSI Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 96 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.3 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =10mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Gate threshold voltage V V =V , I =250A 1.2 - 2 V GS(th) DS GS D I V =24V, V =0V Zero gate voltage drain current - - 0.5 mA DSS DS GS V =24V, V =0V, DS GS - 3 - T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 1.2 1.5 DS(on) GS D mW V =10V, I =30A - 0.9 1.1 GS D R Gate resistance 0.3 0.6 1.2 W G V >2 I R , DS D DS(on)max g Transconductance 80 160 - S fs I =30A D 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-05-14