BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for notebook DC/DC converters I 50 A D 1 Qualified according to JEDEC for target applications N-channel Logic level P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated dv /dt rated Type Package Ordering Code Marking BSC059N03S P-TDSON-8 Q67042-S4222 59N03S Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 50 A D C T =100 C 46 C T =25 C, A 17.5 2) R =45 K/W thJA 3) I Pulsed drain current T =25 C 200 D,pulse C E I =50 A, R =25 Avalanche energy, single pulse 150 mJ AS D GS I =50 A, V =24 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS Power dissipation P T =25 C 48 W tot C T =25 C, A 2.8 2) R =45 K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.11 page 1 2004-02-05BSC059N03S Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.6 K/W thJC Thermal resistance, R minimal footprint - - 62 thJA 2 2) junction - ambient -- 45 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 30 - - V (BR)DSS GS D V V =V , I =35 A Gate threshold voltage 1.2 1.6 2 GS(th) DS GS D V =30 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS R V =4.5 V, I =50 A Drain-source on-state resistance - 6.9 8.6 m DS(on) GS D V =10 V, I =50 A - 4.6 5.5 GS D Gate resistance R - 0.9 - G V >2 I R , DS D DS(on)max g Transconductance 42 84 - S fs I =50 A D 1) J-STD20 and JESD22 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 Rev. 1.11 page 2 2004-02-05