BSC070N10NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS Very low gate charge for high frequency applications R 7 m W DS(on),max Optimized for dc-dc conversion I 90 A D N-channel, normal level PG-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSC070N10NS3 G PG-TDSON-8 070N10NS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 90 A D C T =100C 58 C 2) I T =25C 360 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =50A, R =25W 160 mJ AS D GS V Gate source voltage 20 V GS P T =25C Power dissipation 114 W tot C Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.1 page 1 2011-03-11BSC070N10NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.1 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 2 3) - - 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 100 - - V (BR)DSS GS D V V =V , I =75A Gate threshold voltage 2 2.7 3.5 GS(th) DS GS D V =100V, V =0V, DS GS Zero gate voltage drain current I - 0.01 1 A DSS T =25C j V =100V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =50A Drain-source on-state resistance - 6.3 7 m W DS(on) GS D V =6V, I =25A - 8 14 GS D R Gate resistance - 1.5 - W G V >2 I R , DS D DS(on)max Transconductance g 36 72 - S fs I =50A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-03-11