BSC0901NSI TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Optimized SyncFET for high performance buck converter R 2 mW DS(on),max Integrated monolithic Schottky-like diode I 100 A D Very low on-resistance R V =4.5 V DS(on) GS Q 28 nC OSS 100% avalanche tested Q (0V..10V) 41 nC G Superior thermal resistance N-channel 1) Qualified according to JEDEC for target applications PG-TDSON-8 Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC0901NSI PG-TDSON-8 0901NSI Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 100 A D GS C V =10 V, T =100C 92 GS C V =4.5 V, T =25C 100 GS C V =4.5 V, GS 81 T =100C C V =10 V, T =25C, GS A 28 2) R =50K/W thJA 3) I T =25C 400 Pulsed drain current D,pulse C 4) I T =25C 50 Avalanche current, single pulse AS C E Avalanche energy, single pulse I =50A, R =25W 45 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 1 2012-05-31BSC0901NSI Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 69 W tot C T =25 C, A 2.5 2) R =50K/W thJA Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.8 K/W thJC top - - 20 2 2) Device on PCB R - - 50 6 cm cooling area thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =10mA 30 - - V (BR)DSS GS D dV Breakdown voltage temperature I =10mA, referenced (BR)DSS D - 15 - mV/K coefficient /dT to 25C j V V =V , I =250A Gate threshold voltage 1 - 2.2 V GS(th) DS GS D I V =24V, V =0V Zero gate voltage drain current - - 0.5 mA DSS DS GS V =24V, V =0V, DS GS - 3 - T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =4.5V, I =30A Drain-source on-state resistance - 2.1 2.6 mW DS(on) GS D V =10V, I =30A - 1.7 2.0 GS D Gate resistance R - 0.8 - G W V >2 I R , DS D DS(on)max Transconductance g 65 130 - S fs I =30A D 3) See figure 3 for more detailed information Rev. 2.2 page 2 2012-05-31