BSC0909NS OptiMOS Power-MOSFET Product Summary Features V 34 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 9.2 mW DS(on),max GS Low FOM for High Frequency SMPS SW V =4.5 V 11.8 GS 100% Avalanche tested I 44 A D Improved switching behaviour PG-TDSON-8 N-channel Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on) 1) Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC0909NS PG-TDSON-8 0909NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 44 A D GS C V =10 V, T =100C 28 GS C V =4.5 V, T =25C 39 GS C V =4.5 V, GS 24 T =100C C V =4.5 V, T =25C, GS A 12 2) R =50K/W thJA 3) I T =25C 176 Pulsed drain current D,pulse C 4) I T =25C 35 Avalanche current, single pulse AS C E Avalanche energy, single pulse I =25A, R =25W 10 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 3.5 page 1 2013-05-17BSC0909NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 27 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 4.6 K/W thJC top - - 20 2 2) Device on PCB R - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 34 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250A 1.2 - 2 GS(th) DS GS D V =34V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =34V, V =0V, DS GS - 10 100 T =125C j I V =16V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =15A - 9.4 11.8 mW DS(on) GS D V =10V, I =20A - 7.7 9.2 GS D R Gate resistance 1.5 3 6.0 W G V >2 I R , DS D DS(on)max g Transconductance 25 50 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 3.5 page 2 2013-05-17