BSC0910NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET V 25 25 V DS Optimized for high performance Buck converter R V =10 V 4.6 1.2 mW DS(on),max GS Logic level (4.5V rated) V =4.5 V 5.9 1.6 GS 100% avalanche tested I 40 40 A D 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant VPhase Halogen-free according to IEC61249-2-21 Integrated monolithic Schottky-like diode Type Package Marking BSC0910NDI PG-TISON-8 0910NDI 2) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Q1 Q2 Continuous drain current I T =70C, V =10V 40 40 A D C GS 3) T =25C, V =4.5V 16 31 A GS T =70C, A 13 25 3) V =4.5V GS 4) T =25C, V =10V 11 22 A GS 5) I T =70C 160 160 Pulsed drain current D,pulse C Q1: I =20A, D Avalanche energy, single pulse E Q2: I =20A, 12 80 mJ AS D R =25W GS Gate source voltage V 20 V GS 2) P Power dissipation 2.5 2.5 W tot T =25C A T =25 C, minimum A 1.0 1.0 4) footprint T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev.2.0 page 1 2013-11-27BSC0910NDI Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Q1 - - 4.5 K/W thJC Thermal resistance, junction - case Q2 - - 1.5 Q1 R Thermal resistance, junction - thJA 2 3) - - 50 6 cm cooling area 1) ambient Q2 Q1 minimal footprint, - - 125 4) steady state Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 V V =0V, I =10mA 25 - - V (BR)DSS GS D Q2 Q1 dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Q2 Gate threshold voltage Q1 V V =V , I =250A 1 - 2 V GS(th) DS GS D Q2 Zero gate voltage drain current Q1 I - - 1 A DSS V =20V, V =0V, DS GS T =25C j Q2 - - 500 Q1 - - 0.1 mA V =20V, V =0V, DS GS T =150C j Q2 - 3 - Gate-source leakage current Q1 I GSS V =20V, V =0V - - 100 nA GS DS Q2 R Q1 - 4.7 5.9 mW DS(on) Drain-source on-state V =4.5V, I =25A GS D resistance Q2 - 1.25 1.6 Q1 - 3.5 4.6 V =10V, I =25A GS D Q2 - 0.9 1.2 R Gate resistance Q1 0.4 0.8 1.6 W G Q2 0.4 0.7 1.4 Transconductance Q1 g 42 84 - S fs V >2 I R , DS D DS(on)max I =30A D Q2 85 170 - Rev.2.0 page 2 2013-11-27