BSC0911ND Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET V 25 25 V DS Optimized for high performance Buck converter 3.2 1.2 R V =10 V mW DS(on),max GS Logic level (4.5V rated) V =4.5 V 4.8 1.7 GS N-channel I 40 40 A D 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant VPhase Halogen-free according to IEC61249-2-21 Type Package Marking BSC0911ND PG-TISON-8 0911ND 2) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Q1 Q2 I T =70C,V =10 V Continuous drain current 40 40 A D C GS 3) T =25C,V =4.5 V 18 30 A GS 3) 14 24 T =70C,V =4.5 V A GS 4 T =25C,V =4.5V A GS 14 22 ) 5) I T =70C 160 160 Pulsed drain current D,pulse C Q1: I =20A, D E Q2: I =20A, Avalanche energy, single pulse 20 160 mJ AS D R =25W GS V 20 Gate source voltage V GS 2) Power dissipation P 2.5 2.5 W tot T =25C A T =25 C, minimum A 1.0 1.0 3) footprint Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) One transistor active Rev.2.0 page 1 2013-07-30 BSC0911ND Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Q1 - - 3.4 K/W thJC Thermal resistance, junction - case Q2 - - 1.5 Q1 R Thermal resistance, junction - thJA 2 3) - - 50 6 cm cooling area 1) ambient Q2 Q1 minimal footprint, - - 125 4) steady state Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 V V =0V, I =1mA 25 - V (BR)DSS GS D Q2 Gate threshold voltage Q1 V V =V , I =250A 1.2 1.6 2 GS(th) DS GS D Q2 I Zero gate voltage drain current Q1 DSS V =25V, V =0V, DS GS - - 1 A T =25C j Q2 Q1 V =25V, V =0V, DS GS - - 100 T =150C j Q2 I Gate-source leakage current Q1 GSS V =20V, V =0V - - 100 nA GS DS Q2 Q1 R - 3.7 4.8 mW DS(on) Drain-source on-state V =4.5V, I =20A GS D resistance Q2 - 1.3 1.7 Q1 - 2.5 3.2 V =10V, I =20A GS D Q2 - 0.9 1.2 Gate resistance Q1 R 0.5 0.9 1.8 G W Q2 0.3 0.6 1.2 g Transconductance Q1 38 77 - S fs V >2 I R , DS D DS(on)max I =20A D Q2 65 130 - 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 m thick). One transistor active Rev.2.0 page 2 2013-07-30