BSC0921NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET V 30 30 V DS Optimized for high performance Buck converter R V =10 V 5 1.6 mW DS(on),max GS Logic level (4.5V rated) V =4.5 V 7 2.1 GS N-channel I 40 40 A D 1) Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant VPhase Halogen-free according to IEC61249-2-21 Type Package Marking BSC0921NDI 0921NDI PG-TISON-8 2) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Q1 Q2 I T =70C, V =10V Continuous drain current 40 40 A D C GS 3) 17 31 T =25C, V =4.5V A GS 3) 14 25 T =70C, V =4.5V A GS 4) T =25C, V =10V 11 19 A GS 5) I T =70C 160 160 Pulsed drain current D,pulse C Q1: I =20A, D E Q2: I =20A, Avalanche energy, single pulse 12 60 mJ AS D R =25W GS Gate source voltage V 20 V GS 2) Power dissipation P 2.5 2.5 W T =25C tot A T =25 C, minimum A 1.0 1.0 3) footprint T , T Operating and storage temperature -55 ... 150 C j stg 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 2) One transistor active 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 m thick). One transistor active 5) See figure 3 for more detailed information. Rev.2.0 page 1 2013-07-30 BSC0921NDI Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Q1 - - 4.5 K/W thJC Thermal resistance, junction - case Q2 - - 1.7 Q1 R Thermal resistance, junction - thJA 2 2) - - 50 6 cm cooling area 1) ambient Q2 Q1 minimal footprint, - - 125 3) steady state Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 V V =0V, I =10mA 30 - - V (BR)DSS GS D Q2 Q1 dV I =10mA, referenced Breakdown voltage temperature (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Q2 Gate threshold voltage Q1 V V =V , I =250A 1.2 - 2 V GS(th) DS GS D Q2 I Zero gate voltage drain current Q1 - - 1 A DSS V =24V, V =0V, DS GS T =25C j Q2 - - 500 Q1 - - 0.1 mA V =24V, V =0V, DS GS T =150C j Q2 - 3 - Gate-source leakage current Q1 I GSS V =20V, V =0V - - 100 nA GS DS Q2 R Q1 - 5.8 7.0 mW DS(on) Drain-source on-state V =4.5V, I =20A GS D resistance Q2 - 1.7 2.1 Q1 - 3.9 5.0 V =10V, I =20A GS D Q2 - 1.2 1.6 R Gate resistance Q1 0.4 0.7 1.4 W G Q2 0.3 0.5 1.0 Transconductance Q1 g 38 75 - S fs V >2 I R , DS D DS(on)max I =20A D Q2 70 140 - Rev.2.0 page 2 2013-07-30