BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET V 30 30 V DS Integrated monolithic Schottky-like diode R V =10 V 5 3.7 mW DS(on),max GS Optimized for high performance Buck converter V =4.5 V 7 5.2 GS Logic level (4.5V rated) I 40 40 A D 100% avalanche tested 1) Qualified according to JEDEC for target applications VPhase Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-22 Type Package Marking PG-TISON-8 BSC0924NDI 0924NDI 2) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Q1 Q2 I T =70C, V =10V Continuous drain current 40 40 A D C GS 3) T =25C, V =4.5V 17 32 A GS 3) 14 25 T =70C, V =4.5V A GS 4) 10 13 T =25C, V =10V A GS 5) I T =70C 160 160 Pulsed drain current D,pulse C Q1: I =20A, D E Q2: I =20A, Avalanche energy, single pulse 9 10 mJ AS D R =25W GS V 20 Gate source voltage V GS 2) P Power dissipation T =25C 2.5 2.5 W tot A T =25 C, minimum A 1.0 1.0 3) footprint T , T -55 ... 150 Operating and storage temperature C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) One transistor active 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 m thick). One transistor active See figure 3 for more detailed information. 5) Rev.2.0 page 1 2013-07-30BSC0924NDI Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Q1 R - - 4.2 K/W thJC Thermal resistance, junction - case Q2 - - 3.4 R Q1 Thermal resistance, junction - thJA 2 2) - - 50 6 cm cooling area 1) ambient Q2 Q1 minimal footprint, - - 125 3) steady state Q2 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage Q1 V V =0V, I =10mA 30 - - V (BR)DSS GS D Q2 Q1 dV Breakdown voltage temperature I =10mA, referenced (BR)DSS D - 15 - mV/K coefficient /dT to 25C j Q2 Gate threshold voltage Q1 V V =V , I =250A 1.2 - 2 V GS(th) DS GS D Q2 I Zero gate voltage drain current Q1 - - 1 A DSS V =24V, V =0V, DS GS T =25C j Q2 - - 500 Q1 - - 0.1 mA V =24V, V =0V, DS GS T =150C j Q2 - 3 - I Gate-source leakage current Q1 GSS V =20V, V =0V - - 100 nA GS DS Q2 R Q1 - 5.4 7.0 mW Drain-source on-state DS(on) V =4.5V, I =20A GS D resistance Q2 - 4.2 5.2 Q1 - 3.8 5.0 V =10V, I =20A GS D Q2 - 2.8 3.7 R Gate resistance Q1 1.3 2.6 5.2 W G Q2 0.5 0.9 1.8 g Transconductance Q1 32 65 - S fs V >2 I R , DS D DS(on)max I =20A D Q2 36 71 - Rev.2.0 page 2 2013-07-30