BSC0925ND TM OptiMOS Power-MOSFET Product Summary Features V 30 V DS Dual N-channel OptiMOS MOSFET R 5 mW DS(on),max Optimized for clean switching I 40 A D 100% avalanche tested Q 8.6 nC OSS Superior thermal resistance Q (0V..10V) 13 nC G Optimized for high performance Buck converter 1) Qualified according to JEDEC for target applications VPhase Pb-free lead plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC0925ND PG-TISON-8 0925ND 2) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I V =10 V, T =25C Continuous drain current 40 A D GS C V =4.5 V, GS 15 3) T =25C A V =4.5 V, GS 12 3) T =70C A 4) 11 V =10 V, T =25C GS A 5) I T =25C 160 Pulsed drain current D,pulse C E I =20A, R =25W Avalanche energy, single pulse 14 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) One transistor active 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 m thick). One transistor active 5) See figure 3 for more detailed information. Rev. 2.0 page 1 2013-07-30BSC0925ND Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 30 W tot C T =25 C, A 2.5 3) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 4.2 K/W thJC top - - 20 2 3) R Device on PCB - - 50 thJA 6 cm cooling area 4) - - 125 minimum footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1.2 - 2.0 GS(th) DS GS D V =30V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS R V =4.5V, I =20A Drain-source on-state resistance - 5.6 7 mW DS(on) GS D V =10V, I =20A - 4.2 5 GS D Gate resistance R 1.3 2.6 5.2 W G V >2 I R , DS D DS(on)max Transconductance g 38 77 - S fs I =30A D Rev. 2.0 page 2 2013-07-30