BSC100N03MS G OptiMOS3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 10 mW DS(on),max GS Low FOM for High Frequency SMPS V =4.5 V 12 SW GS 100% avalanche tested I 44 A D PG-TDSON-8 N-channel Very low on-resistance R V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on) 1) Qualified according to JEDEC for target applications Superior thermal resistance Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC100N03MS G PG-TDSON-8 100N03MS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 44 A D GS C V =10 V, T =100C 28 GS C V =4.5 V, T =25C 41 GS C V =4.5 V, GS 25 T =100C C V =4.5 V, T =25C, GS A 12 2) R =50K/W thJA 3) I T =25C 176 Pulsed drain current D,pulse C 4) I T =25C 40 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =30A, R =25W 10 mJ AS D GS V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-21BSC100N03MS G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 30 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - - 4.1 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1 - 2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =16V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 9.6 12 mW DS(on) GS D V =10V, I =30A - 8.3 10 GS D R Gate resistance 0.4 0.9 1.6 W G V >2 I R , DS D DS(on)max g Transconductance 27 54 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.1 page 2 2013-05-21