BSC118N10NS G OptiMOS2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 11.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 71 A D Very low on-resistance R DS(on) 150 C operating temperature PG-TDSON-8 Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type Package Marking BSC118N10NS G PG-TDSON-8 118N10NS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 71 A D C T =100 C 44 C T =25 C, A 11 2) R =45 K/W thJA 3) I T =25 C 280 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =50 A, R =25 155 mJ AS D GS Gate source voltage V 20 V GS P T =25 C Power dissipation 114 W tot C Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev. 1.08 page 1 2009-11-03BSC118N10NS G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 1.1 K/W thJC top - - 18 R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 2 2) -- 45 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =70 A 234 GS(th) DS GS D V =100 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =100 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS V =10 V, I =50 A Drain-source on-state resistance R - 10 11.8 m DS(on) GS D R Gate resistance - 0.8 - G V >2 I R , DS D DS(on)max g Transconductance 33 65 - S fs I =50 A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 1.08 page 2 2009-11-03