BSC120N03LS G OptiMOS3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 12 mW DS(on),max Optimized technology for DC/DC converters I 39 A D 1) Qualified according to JEDEC for target applications PG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC120N03LS G PG-TDSON-8 120N03LS Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I V =10 V, T =25C 39 A D GS C V =10 V, T =100C 24 GS C V =4.5 V, T =25C 33 GS C V =4.5 V, GS 21 T =100C C V =10 V, T =25C, GS A 12 2) R =50K/W thJA 3) I T =25C 156 Pulsed drain current D,pulse C 4) I T =25C 35 Avalanche current, single pulse AS C E I =25A, R =25W Avalanche energy, single pulse 10 mJ AS D GS I =39A, V =24V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 2.1 page 1 2013-05-21BSC120N03LS G Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Power dissipation P T =25C 28 W tot C T =25 C, A 2.5 2) R =50K/W thJA T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - - 4.5 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j I V =20V, V =0V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =15A - 13.2 16.5 mW DS(on) GS D V =10V, I =30A - 10 12 GS D R Gate resistance 0.4 0.9 1.8 W G V >2 I R , DS D DS(on)max g Transconductance 25 50 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.1 page 2 2013-05-21