BSC320N20NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 36 A D Very low on-resistance R DS(on) Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type BSC320N20NS3 G Package PG-TDSON-8 320N20NS Marking Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 36 A D C T =100 C 24 C 2) I T =25 C Pulsed drain current 144 D,pulse C Avalanche energy, single pulse E I =36 A, R =25 190 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS Power dissipation P T =25 C 125 W tot C T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2011-05-20BSC320N20NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1 K/W thJC R minimal footprint - - 75 thJA Thermal resistance, junction - ambient 3) 6 cm2 cooling area -- 50 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 200 - - V (BR)DSS GS D V V =V , I =90 A Gate threshold voltage 234 GS(th) DS GS D V =160 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =160 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =10 V, I =36 A Drain-source on-state resistance -27 32 m DS(on) GS D Gate resistance R - 2.5 - G V >2 I R , DS D DS(on)max g Transconductance 29 58 - S fs I =36 A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-05-20