BSC600N25NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS N-channel, normal level R 60 m W DS(on),max Excellent gate charge x R product (FOM) DS(on) I 25 A D Very low on-resistance R DS(on) Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type BSC600N25NS3 G Package PG-TDSON-8 Marking 600N25NS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 25 A D C T =100C 16 C 2) I T =25C 100 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =25A, R =25W 210 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s Gate source voltage V 20 V GS P T =25C Power dissipation 125 W tot C T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.4 page 1 2011-07-14BSC600N25NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1 K/W thJC R minimal footprint - - 75 thJA Thermal resistance, junction - ambient 3) - - 50 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS R V =10V, I =25A Drain-source on-state resistance - 50 60 m W DS(on) GS D R Gate resistance - 2.5 - W G V >2 I R , DS D DS(on)max g Transconductance 25 49 - S fs I =25A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 2011-07-14