BSD 223P OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS Dual P-Channel R 1.2 DS(on) Enhancement mode I -0.39 A D Super Logic Level (2.5 V rated) PG-SOT-363 150C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 MOSFET1: 1,2,6 Halogen-free according to IEC61249-2-21 Drain MOSFET2: 3,4,5 pin 6,3 Type Package Tape & Reel Marking Gate Source BSD 223P PG-SOT-363 H6327: 3000pcs/r pin 1,4 X1s pin 2,5 Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.39 A T =70C -0.31 A -1.56 Pulsed drain current I D puls T =25C A 1.4 mJ Avalanche energy, single pulse E AS I =-0.39 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-0.39A, V =-16V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 12 GS 0.25 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev.1.6 Page 1 2014-07-29 BSD 223P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 180 K/W Thermal resistance, junction - soldering point R thJS - - 500 Thermal resistance, junction - ambient, leaded R thJA Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-1.5A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 1.27 2.1 Drain-source on-state resistance R DS(on) V =-2.5V, I =-0.29A GS D - 0.7 1.2 Drain-source on-state resistance R DS(on) V =-4.5, I =-0.39A GS D Rev.1.6 Page 2 2014-07-29