X-On Electronics has gained recognition as a prominent supplier of BSL202SNH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL202SNH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSL202SNH6327XTSA1 Infineon

BSL202SNH6327XTSA1 electronic component of Infineon
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Part No.BSL202SNH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET SMALL SIGNALP-CH
Datasheet: BSL202SNH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6138 ea
Line Total: USD 0.61 
Availability - 2899
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2672
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4332
10 : USD 0.3817
30 : USD 0.3551
100 : USD 0.3302
500 : USD 0.3149
1000 : USD 0.3054

2899
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6138
10 : USD 0.4389
100 : USD 0.2992
500 : USD 0.2398
1000 : USD 0.2211
3000 : USD 0.1892
9000 : USD 0.1804

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 48
Multiples : 1
48 : USD 0.8515
64 : USD 0.6435
100 : USD 0.4387
200 : USD 0.4372
500 : USD 0.3462
1000 : USD 0.3202

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2248
6000 : USD 0.2225
9000 : USD 0.2156
15000 : USD 0.2134
21000 : USD 0.2114

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Package Case
Transistor Type
Brand
Fall Time
Id Continuous Drain Current
Pd Power Dissipation
Qg Gate Charge
Rds On Drain Source Resistance
Rise Time
Typical Turn Off Delay Time
Typical Turn On Delay Time
Vds Drain Source Breakdown Voltage
Vgs Gate Source Voltage
Vgs Th Gate Source Threshold Voltage
Rohs Mouser
Height
Length
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSL202SNH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL202SNH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSL202SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 22 mW DS(on),max GS Enhancement mode V =2.5 V 36 GS Super Logic level (2.5V rated) I 7.5 A D Avalanche rated dv /dt rated TSOP-6 Pb-free lead plating RoHS compliant 6 5 Qualified according to AEC Q101 4 Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL202SN TSOP-6 H6327: 3000 pcs/ reel sPD Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 7.5 A D A T =70C 6.0 A I T =25C Pulsed drain current 30 D,pulse A Avalanche energy, single pulse E I =7.5A, R =25W 30 mJ AS D GS I =7.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 12 V GS 1) P T =25C 2 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (0V to 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.0 page 1 2014-01-08BSL202SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - minimal footprint SMD version, device on PCB R minimal footprint - - 230 thJA 2 1) - - 62.5 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0V, I =250 A Drain-source breakdown voltage 20 - - V (BR)DSS GS D V V =V , I =30A Gate threshold voltage 0.7 0.95 1.2 GS(th) DS GS D V =20V, V =0V, DS GS Drain-source leakage current I - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j Gate-source leakage current I V =12V, V =0V - - 100 nA GSS GS DS R V =2.5V, I =5.9A Drain-source on-state resistance - 26 36 mW DS(on) GS D V =4.5V, I =7.5A - 17 22 GS D V >2 I R , DS D DS(on)max g Transconductance 25 - S fs I =7.5A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.0 page 2 2014-01-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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