BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =4.5 V 50 mW DS(on),max GS Enhancement mode V =2.5 V 85 GS Super Logic level (2.5V rated) I 2.5 A D Avalanche rated Qualified according to AEC Q101 PG-TSOP6 Pb-free lead plating RoHS compliant 6 5 4 Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL205N PG-TSOP6 H6327: 3000 pcs/ reel sPK Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j (1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current 2.5 A D A T =70C 2.0 A Pulsed drain current I T =25C 10 D,pulse A Avalanche energy, single pulse E I =2.5A, R =25W 10.8 mJ AS D GS I =2.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 12 V GS (3) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM class 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 (1) Remark: one of both transistors in operation. Rev 2.3 page 1 2013-11-06BSL205N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, (2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250 A 20 - - V (BR)DSS GS D V V =V , I =11A Gate threshold voltage 0.6 0.95 1.2 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =12V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =2.5V, I =1.95A Drain-source on-state resistance - 62 85 mW DS(on) GS D V =4.5V, I =2.5A - 39 50 GS D V >2 I R , DS D DS(on)max g Transconductance - 8.6 - S fs I =2A D (2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mkm long they are present on both sides of the PCB. Rev 2.3 page 2 2013-11-06