X-On Electronics has gained recognition as a prominent supplier of BSL207SP H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL207SP H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSL207SP H6327 Infineon

BSL207SP H6327 electronic component of Infineon
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See Product Specifications
Part No.BSL207SP H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET SMALL SIGNALP-CH
Datasheet: BSL207SP H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 8564
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2497
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7613
10 : USD 0.6326
30 : USD 0.5673
100 : USD 0.5039
500 : USD 0.4647
1000 : USD 0.446

8564
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.506
100 : USD 0.3531
500 : USD 0.3036
1000 : USD 0.2662
3000 : USD 0.2409
6000 : USD 0.2343
9000 : USD 0.2343
24000 : USD 0.2266

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Factory Pack Quantity :
Rohs Mouser
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSL207SP H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL207SP H6327 and other electronic components in the MOSFETs category and beyond.

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Rev. 2.05 BSL207SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 41 m DS(on) Enhancement mode I -6 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 Pb-free lead plating RoHS compliant 2 6 1 QualifiedaccordingtoAECQ101 P-TSOP6-6 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL207SP P-TSOP6-6 H6327:3000 pcs/r. pin 4 sPA Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -6 A T =70C -4.8 A -24 Pulsed drain current I D puls T =25C A 44 mJ Avalanche energy, single pulse E AS I =-6 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-6A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1a JESD22-A114-HBM Page 1 2013-11-06Rev. 2.05 BSL207SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-40A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 43 65 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-4.9A GS D - 29 41 Drain-source on-state resistance R DS(on) V =-4.5, I =-6A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2013-11-06

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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