X-On Electronics has gained recognition as a prominent supplier of BSL207SPH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL207SPH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSL207SPH6327XTSA1 Infineon

BSL207SPH6327XTSA1 electronic component of Infineon
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Part No.BSL207SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Datasheet: BSL207SPH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 6369
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4943
10 : USD 0.4823
30 : USD 0.4744
100 : USD 0.4664

6369
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.4928
100 : USD 0.3487
500 : USD 0.2838
1000 : USD 0.2629
3000 : USD 0.2343
6000 : USD 0.2244

2775
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.924
10 : USD 0.637
51 : USD 0.336
140 : USD 0.3178
1000 : USD 0.3066

2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 45
Multiples : 1
45 : USD 0.9117
54 : USD 0.7605
100 : USD 0.538
200 : USD 0.5135
500 : USD 0.4258
1000 : USD 0.4225

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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We are delighted to provide the BSL207SPH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL207SPH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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Rev. 2.05 BSL207SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 41 m DS(on) Enhancement mode I -6 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 Pb-free lead plating RoHS compliant 2 6 1 QualifiedaccordingtoAECQ101 P-TSOP6-6 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL207SP P-TSOP6-6 H6327:3000 pcs/r. pin 4 sPA Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -6 A T =70C -4.8 A -24 Pulsed drain current I D puls T =25C A 44 mJ Avalanche energy, single pulse E AS I =-6 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-6A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1a JESD22-A114-HBM Page 1 2013-11-06Rev. 2.05 BSL207SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-40A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 43 65 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-4.9A GS D - 29 41 Drain-source on-state resistance R DS(on) V =-4.5, I =-6A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2013-11-06

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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