X-On Electronics has gained recognition as a prominent supplier of BSL211SPH6327XTSA1 MOSFET across the USA, India, Europe, Australia, and various other global locations. BSL211SPH6327XTSA1 MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BSL211SPH6327XTSA1 Infineon

BSL211SPH6327XTSA1 electronic component of Infineon
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See Product Specifications
Part No.BSL211SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFET
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Datasheet: BSL211SPH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.231 ea
Line Total: USD 693

Availability - 2910
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
48
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4277
10 : USD 0.4182
30 : USD 0.4127
100 : USD 0.407

11606
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5543
10 : USD 0.4796
100 : USD 0.3404
500 : USD 0.2933
1000 : USD 0.2564
3000 : USD 0.2311
6000 : USD 0.2254
9000 : USD 0.2231
24000 : USD 0.2162

2910
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 75
Multiples : 1
75 : USD 0.5427
100 : USD 0.5054
200 : USD 0.5037
500 : USD 0.4242
1000 : USD 0.4013
2000 : USD 0.3982
3000 : USD 0.3802

2910
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.2306
6000 : USD 0.2232
9000 : USD 0.2141
24000 : USD 0.2128
30000 : USD 0.2107

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain Current
Drain-Source Voltage
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the BSL211SPH6327XTSA1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL211SPH6327XTSA1 and other electronic components in the MOSFET category and beyond.

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Rev 2.0 BSL211SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 67 m DS(on) Enhancement mode I -4.7 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 2 Pb-free lead plating RoHS compliant 6 1 QualifiedaccordingtoAECQ101 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL211SP P-TSOP6-6 H6327: 3000pcs/r. sPB pin 4 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -4.7 A T =70C -3.8 A -18.8 Pulsed drain current I D puls T =25C A 26 mJ Avalanche energy, single pulse E AS I =-4.7 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-4.7A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Page 1 2014-01-09Rev 2.0 BSL211SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0V, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-25A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 94 110 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-3.7A GS D - 54 67 Drain-source on-state resistance R DS(on) V =-4.5, I =-4.7A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2014-01-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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