X-On Electronics has gained recognition as a prominent supplier of BSL211SPH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL211SPH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSL211SPH6327XTSA1 Infineon

BSL211SPH6327XTSA1 electronic component of Infineon
BSL211SPH6327XTSA1 Infineon
BSL211SPH6327XTSA1 MOSFETs
BSL211SPH6327XTSA1  Semiconductors

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See Product Specifications
Part No. BSL211SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Datasheet: BSL211SPH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8763 ea
Line Total: USD 0.88 
Availability - 11360
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37
Ship by Thu. 20 Mar to Tue. 25 Mar
MOQ : 1
Multiples : 1
1 : USD 0.4582
10 : USD 0.4461
30 : USD 0.4389
100 : USD 0.3312

11360
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 0.8763
10 : USD 0.5075
100 : USD 0.337
500 : USD 0.2695
1000 : USD 0.2464
3000 : USD 0.1947
9000 : USD 0.1903

2910
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 135
Multiples : 1
135 : USD 0.949

5820
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.2254
6000 : USD 0.2231
9000 : USD 0.2204
15000 : USD 0.2181
21000 : USD 0.2161
30000 : USD 0.2139

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain Current
Drain-Source Voltage
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the BSL211SPH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL211SPH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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Rev 2.0 BSL211SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 67 m DS(on) Enhancement mode I -4.7 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 2 Pb-free lead plating RoHS compliant 6 1 QualifiedaccordingtoAECQ101 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL211SP P-TSOP6-6 H6327: 3000pcs/r. sPB pin 4 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -4.7 A T =70C -3.8 A -18.8 Pulsed drain current I D puls T =25C A 26 mJ Avalanche energy, single pulse E AS I =-4.7 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-4.7A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Page 1 2014-01-09Rev 2.0 BSL211SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0V, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-25A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 94 110 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-3.7A GS D - 54 67 Drain-source on-state resistance R DS(on) V =-4.5, I =-4.7A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2014-01-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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