X-On Electronics has gained recognition as a prominent supplier of BSL211SPH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSL211SPH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSL211SPH6327XTSA1 Infineon

BSL211SPH6327XTSA1 electronic component of Infineon
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Part No.BSL211SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Datasheet: BSL211SPH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6688 ea
Line Total: USD 0.67 
Availability - 11457
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17460
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2454
6000 : USD 0.243
9000 : USD 0.2379
15000 : USD 0.2337
21000 : USD 0.2238
30000 : USD 0.2216

41
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3579
10 : USD 0.3485
30 : USD 0.3427
100 : USD 0.337

11457
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6688
10 : USD 0.4697
100 : USD 0.3212
500 : USD 0.2574
1000 : USD 0.2365
3000 : USD 0.198
9000 : USD 0.198
24000 : USD 0.1903

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 46
Multiples : 1
46 : USD 0.897
59 : USD 0.689
100 : USD 0.4712
200 : USD 0.4695
500 : USD 0.3722
1000 : USD 0.338
3000 : USD 0.3364

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain Current
Drain-Source Voltage
Gate-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the BSL211SPH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSL211SPH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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Rev 2.0 BSL211SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 67 m DS(on) Enhancement mode I -4.7 A D Super Logic Level (2.5 V rated) P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated 4 3 5 2 Pb-free lead plating RoHS compliant 6 1 QualifiedaccordingtoAECQ101 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL211SP P-TSOP6-6 H6327: 3000pcs/r. sPB pin 4 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -4.7 A T =70C -3.8 A -18.8 Pulsed drain current I D puls T =25C A 26 mJ Avalanche energy, single pulse E AS I =-4.7 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-4.7A, V =-16V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 12 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Page 1 2014-01-09Rev 2.0 BSL211SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0V, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-25A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 94 110 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-3.7A GS D - 54 67 Drain-source on-state resistance R DS(on) V =-4.5, I =-4.7A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2014-01-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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