BSL215C OptiMOS2 + OptiMOS-P 2 Small Signal Transistor Product Summary Features P N Complementary P + N channel V -20 20 V DS Enhancement mode R V =4.5 V 150 140 mW DS(on),max GS Super Logic level (2.5V rated) V =2.5 V 280 250 GS Avalanche rated I -1.5 1.5 A D Qualified according to AEC Q101 100% lead-free RoHS compliant PG-TSOP6 Halogen free according to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL215C PG-TSOP-6 H6327: 3000 pcs / reel sPH Yes Non dry 1) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit P N I T =25C Continuous drain current -1.5 1.5 A D A T =70C -1.2 1.2 A I T =25C Pulsed drain current -6 6 D,pulse A P: I =-1.5A, D E N: I =1.5A, Avalanche energy, single pulse 11 3.7 mJ AS D R =25W GS Gate source voltage V 12 V GS P T =25C Power dissipation 0.5 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-A114-HBM 0 (<250V) Soldering temperature T 260 C solder 55/150/56 IEC climatic category DIN IEC 68-1 1) Remark: only one of both transistors active Rev.2.2 page 1 2013-11-06BSL215C Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics P Thermal resistance, junction - 2) R - - 250 K/W thJA minimal footprint ambient N Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =-250A Drain-source breakdown voltage P - - -20 V (BR)DSS GS D V =0V, I =250A N 20 - - GS D V V =V , I =-11A Gate threshold voltage P -1.2 -0.9 -0.6 GS(th) DS GS D N V =V , I =3.7A 0.7 0.95 1.2 DS GS D V =-20V, V =0V, DS GS Zero gate voltage drain current P I - - -1 A DSS T =25C j V =20V, V =0V, DS GS N - - 1 T =25C j V =-20V, V =0V, DS GS P - - -100 T =150C j V =20V, V =0V, DS GS N - - 100 T =150C j Gate-source leakage current P I V =12V, V =0V - - 100 nA GSS GS DS N P R V =-2.5V, I =-1.1A - 163 280 mW DS(on) GS D Drain-source on-state resistance N V =2.5V, I =0.7A - 173 250 GS D V =-4.5V, I =-1.5A P - 102 150 GS D V =4.5V, I =1.5A N - 108 140 GS D V >2 I R , DS D DS(on)max Transconductance P g - 4.5 - S fs I =-1.2A D V >2 I R , DS D DS(on)max N - 4 - I =1.2A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB Rev.2.2 page 2 2013-11-06