BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 25 mW DS(on),max GS Enhancement mode V =4.5 V 38 GS Logic level (4.5V rated) I 7.1 A D Avalanche rated dv /dt rated PG-TSOP-6 Pb-free lead plating RoHS compliant 6 5 Qualified according to AEC Q101 4 Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL302SN PG-TSOP-6 H6327 = 3000 pcs. / reel sPE Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 7.1 A D A T =70C 5.7 A I T =25C Pulsed drain current 28 D,pulse A Avalanche energy, single pulse E I =7.1A, R =25W 30 mJ AS D GS I =7.5A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS 1) P T =25C 2 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114-HBM 0 (0V to 250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 2.0 page 1 2014-01-09BSL302SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - minimal footprint SMD version, device on PCB R minimal footprint - - 230 thJA 2 1) - - 62.5 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =250A 30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =30A 1.2 1.70 2 GS(th) DS GS D V =20V, V =0V, DS GS Drain-source leakage current I - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =4.5V, I =5.7A Drain-source on-state resistance - 27 38 mW DS(on) GS D V =10V, I =7.1A - 18 25 GS D V >2 I R , DS D DS(on)max g Transconductance 16 - S fs I =7.1A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 2.0 page 2 2014-01-09