Mosfet Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, -30V BSL303SPE Data Sheet Rev. 2.0 Final Industrial & MultimarketBSL303SPE OptiMOS-P 3 Small-Signal-Transistor Product Summary Features V -30 V DS P-channel R V =-10 V 33 m DS(on),max GS Enhancement mode V =-4.5 V 52 GS Logic level (4.5V rated) I -6.3 A D ESD protected Avalanche rated PG-TSOP-6 Qualified according to AEC Q101 6 5 100% Lead-free RoHS compliant, halogen free 4 1 2 3 Type Package Tape and Reel Information Marking Hal. Free Packing BSL303SPE PG-TSOP-6 H6327: 3000 pcs/ reel sPV Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current -6.3 A D A T =70 C -5.0 A I T =25 C Pulsed drain current -25.2 D,pulse A Avalanche energy, single pulse E I =-6.3A, R =25 30.0 mJ AS D GS I =-6.3 A, V =-15 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6kV/s T =150 C j,max V Gate source voltage 20 V GS P T =25 C 2.0 Power dissipation W tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 2 (2KV to 4kV) V Soldering Temperature 260 C C IEC climatic category DIN IEC 68-1 55/150/56 C Rev 2.0 page 1 2014-11-18