Rev 2.0 BSL307SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -30 V DS P-Channel R 43 m DS(on) Enhancement mode I -5.5 A D Logic Level PG-TSOP-6-1 150C operating temperature Avalanche rated dv/dt rated 4 3 5 2 6 1 QualifiedaccordingtoAECQ101 HalogenfreeaccordingtoIEC61249221 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL307SP PG-TSOP-6-1 H6327: 3000pcs/r. pin 4 sPC Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -5.5 A T =70C -4.4 A -22 Pulsed drain current I D puls T =25C A 44 mJ Avalanche energy, single pulse E AS I =-5.5 A , V =-25V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-5.5A, V =24V, di/dt=200A/s, T =150C S DS jmax Gate source voltage V 20 V GS 2 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 1a JESD22-A114-HBM Page 1 2014-01-09Rev 2.0 BSL307SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 50 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 230 2 1) 6 cm cooling area - - 62.5 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -30 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-40A D A Zero gate voltage drain current I DSS V =-30V, V =0, T =25C - -0.1 -1 DS GS j V =-30V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 52 74 Drain-source on-state resistance R m DS(on) V =-4.5V, I =-4.2A GS D - 31 43 Drain-source on-state resistance R DS(on) V =-10V, I =-5.5A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 5 sec. Page 2 2014-01-09