BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V -30 V DS Dual P-channel R V =-10 V 80 mW DS(on),max GS Enhancement mode V =-4.5 V 130 GS Logic level (4.5V rated) I -2.0 A D ESD protected PG-TSOP-6 Qualified according to AEC Q101 6 5 4 100% Lead-free RoHS compliant Halogen free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL308PE PG-TSOP-6 H6327: 3000 pcs/ reel sPR Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j 1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current -2.0 A D A T =70C -1.6 A Pulsed drain current I T =25C -8.0 D,pulse A Avalanche energy, single pulse E I =-2A, R =25W -10.7 mJ AS D GS I =-2A, D V =-16V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =-200A/s, T =150C j,max Gate source voltage V 20 V GS 2) P T =25C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 2 (2kV to 4kV) Soldering Temperature 260 C C IEC climatic category DIN IEC 68-1 55/150/56 C 1) Only one of both transistors in operation Rev 2.03 page 1 2013-11-07BSL308PE Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 2) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =-250A -30 - - V (BR)DSS GS D V V =V , I =-11A Gate threshold voltage -2.0 -1.5 -1.0 GS(th) DS GS D V =-30V, V =0V, DS GS I Drain-source leakage current - - -1 mA DSS T =25C j V =-30V, V =0V, DS GS - - -100 T =150C j I V =-20V, V =0V Gate-source leakage current - - -5 mA GSS GS DS V =-4.5V, GS Drain-source on-state resistance R - 88 130 mW DS(on) I =-1.7A D V =-10V, I =-2 A - 62 80 GS D V >2 I R , DS D DS(on)max Transconductance g 4.6 - S fs I =-1.6A D 2) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70 m thick and 20mm long they are present on both sides of the PCB. Rev 2.03 page 2 2013-11-07